HO CHIEN ELECTRONIC GROUP INC
Regular type Glass Passivated Wafer / Die
3" & 4" Wafer Size
| Specification | Die Size | ||||||||||||||
| Die Size | mm | 1.04 | 1.18 | 1.26 | 1.48 | 1.80 | 2.21 | 2.50 | 2.92 | 3.36 | 4.20 | 4.96 | 5.46 | 7.56 | 9.00 |
| mil | 41 | 46 | 50 | 58 | 71 | 87 | 98 | 115 | 132 | 165 | 195 | 215 | 298 | 354 | |
| Active Area | mm | 0.90 | 0.90 | 1.02 | 1.22 | 1.46 | 1.97 | 2.20 | 2.64 | 3.08 | 3.84 | 4.60 | 5.10 | 7.20 | 8.64 |
| mil | 35 | 35 | 40 | 48 | 58 | 78 | 87 | 104 | 121 | 151 | 181 | 201 | 284 | 340 | |
| Thickness | 10 mil | ||||||||||||||
| Metalization | Gold (Au) | ||||||||||||||
| Peak Reverse
Voltage
Vrm@25oC |
200 - 2000 Volt | ||||||||||||||
| Max. Forward
Current
Io = A (1) |
Amp | 1.0 | 1.0 | 1.0 | 1.5 | 2.0 | 3.0 | 4.0 | 5.0 | 8.0 | 25 | 35 | 50 | 75 | 90 |
| Max. Surge Current
Ifsm (2) |
Amp | 15 | 25 | 30 | 45 | 60 | 90 | 120 | 180 | 240 | * | * | * | * | * |
| Max. Forward
Voltage Drop
@ Io (3) |
1.0V | ||||||||||||||
| Max. Reverse
Current
@ Vr / 25oC |
10.00 uA | ||||||||||||||
| Operation Temperature | -30 to +125oC | ||||||||||||||
| Storage Temperature | -30 to +125oC | ||||||||||||||
| Die Quantity Per 4" Wafer | Pcs | 6049 | 4834 | 4122 | 2980 | 1991 | 1325 | 1042 | 793 | 590 | 371 | 260 | 214 | 101 | 68 |
| Die Quantity Per 3" Wafer | Pcs | - | - | 2336 | 1630 | - | 770 | - | 608 | 442 | - | 200 | - | - | - |
| Note | (1): Current rating is upon heatsink apply. |
| (2): IO:8.3mS with Heatsink applied. | |
| (3): Forward drop is measured by heatsink applied. |
Chip diode products by:
HO CHIEN ELECTRONIC GROUP INC
1687 CURTISS
COURT, LA VERNE, CA 91750, USA