HO CHIEN ELECTRONIC GROUP INC
Fast Recovery type Glass Passivated Wafer / Die
[ 150ns / 250ns / 500ns - 1000V ]
3" & 4" Wafer Size
 

Specification	Die Size
Die Size	mm	1.04	1.18	1.26	1.48	1.80	2.21	2.50	2.92	3.36	4.20	4.96	5.46	7.56	9.00
	mil	41	46	50	58	71	87	98	115	132	165	195	215	298	354
Active Area	mm	0.90	0.90	1.02	1.22	1.46	1.97	2.20	2.64	3.08	3.84	4.60	5.10	7.20	8.64
	mil	35	35	40	48	58	78	87	104	121	151	181	201	284	340
Thickness	10 mil
Metalization	Gold (Au)
Peak Reverse Voltage Vrm@25oC	200 - 1000 Volt
Max. Forward Current Io = A (1)	Amp	1.0	1.0	1.0	1.5	2.0	3.0	4.0	5.0	8.0	25	35	50	75	90
Max. Surge Current Ifsm (2)	Amp	15	25	30	45	60	90	120	180	240	*	*	*	*	*
Max. Forward Voltage Drop @ Io (3)	1.3V
Max. Reverse Current @ Vr / 25oC	10.00 uA
Switch Time Trr@RG1	400 V   =   150ns 600 V   =   250ns 800 - 1000V   =   500ns
Operation Temperature	-30 to +125oC
Storage Temperature	-30 to +125oC
Die Quantity Per 4" Wafer	Pcs	6049	4834	4122	2980	1991	1325	1042	793	590	371	260	214	101	68
Die Quantity Per 3" Wafer	Pcs	-	-	2336	1630	-	770	-	608	442	-	200	-	-	-

Note	(1): Current rating is upon heatsink apply.
	(2): IO:8.3mS with Heatsink applied.
	(3): Forward drop is measured by heatsink applied.

Chip diode products by:
HO CHIEN ELECTRONIC GROUP INC
1687 CURTISS COURT, LA VERNE, CA  91750, USA
Copyright @ 1998-2014 Ho Chien Electronic Group, Inc. All rights reserved.